Photoinduced Changes in As2S3 Thin Films | ||
| Egyptian Journal of Solids | ||
| Article 4, Volume 29, Issue 2, 2006, Pages 261-272 PDF (125.41 K) | ||
| DOI: 10.21608/ejs.2006.149274 | ||
| Abstract | ||
| Optoelectronic, photoelectric and dc conductivity of amorphous As2S3 thin films prepared by thermal evaporation are investigated. Absorption coefficient as well as photoconductivity spectral dependence is used to estimate the band gap. The temperature dependence of dc conductivity and steady state photoconductivity revealed a discontinuity at 150 K. A comparative study of the film properties before and after irradiation demonstrated the light-induced changes. Photodarkening, with metastable and transient components, is observed. The photoconductivity kinetics indicated that the new localized states, created by illumination, dominate the recombination process in a similar manner to the original states. The similarity in behaviours obtained before and after irradiation suggests that photochemical changes are produced by illumination. | ||
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