Dark and Photovoltaic properties of p-CoPc/n-GaAs Heterojunction cells | ||
| Egyptian Journal of Solids | ||
| Article 6, Volume 26, Issue 1, 2003, Pages 55-65 | ||
| DOI: 10.21608/ejs.2003.150015 | ||
| Abstract | ||
| Organic / inorganic heterojunction cells of p-CoPc/ n- GaAs, fabricated by vacuum deposition of CoPc thin films onto GaAs single crystals, show a conversion efficiency as high as 0.81% and an open circuit voltage of 0.33V under illumination by light with a power density of 50 mWcm-2 . These parameters have been estimated at room temperature. The estimated activation energy of the charge carriers was found to be 0.35 eV and the cell series resistance of 1kΩ. The above values have been evaluated from the measurements of the dark I-V characteristics. The linearity of the C-2-V dependence indicates that the junction is perfectly abrupt. From such measurements the free-carrier concentration and the barrier width can be estimated. Their values were found to be 1.2 x 1017 cm-3 and 32.4 nm, respectively. | ||
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