(2002). Microwave Measurements of the Dielectric Properties of Silicon Carbide at High Temperature. test, 25(2), 263-273. doi: 10.21608/ejs.2002.150483
. "Microwave Measurements of the Dielectric Properties of Silicon Carbide at High Temperature". test, 25, 2, 2002, 263-273. doi: 10.21608/ejs.2002.150483
(2002). 'Microwave Measurements of the Dielectric Properties of Silicon Carbide at High Temperature', test, 25(2), pp. 263-273. doi: 10.21608/ejs.2002.150483
Microwave Measurements of the Dielectric Properties of Silicon Carbide at High Temperature. test, 2002; 25(2): 263-273. doi: 10.21608/ejs.2002.150483

Microwave Measurements of the Dielectric Properties of Silicon Carbide at High Temperature

Egyptian Journal of Solids
Article 10, Volume 25, Issue 2, 2002, Pages 263-273    PDF (776.6 K)
DOI: 10.21608/ejs.2002.150483
Abstract
The dielectric properties of silicon carbide SiC have been measured
using cavity perturbation technique. Three tubes with diameter 2 mm, 3 mm,
and 5 mm were filled with the powerful material of SiC. The measurements
were taken for each tube at different frequencies 0.615 GHz, 1.412 GHz, 2.214
GHz, 3.017 GHz and 3.820 GHz in a temperature range from 25oC to 1800oC.
The electrical conductivity and the activation energy of SiC at the above
frequencies and temperatures were calculated using the measured real and
imaginary components of the complex permittivity.
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