(2000). Temperature Dependence of theTransport Properties in ZnS. test, 23(1), 27-35. doi: 10.21608/ejs.2000.151467
. "Temperature Dependence of theTransport Properties in ZnS". test, 23, 1, 2000, 27-35. doi: 10.21608/ejs.2000.151467
(2000). 'Temperature Dependence of theTransport Properties in ZnS', test, 23(1), pp. 27-35. doi: 10.21608/ejs.2000.151467
Temperature Dependence of theTransport Properties in ZnS. test, 2000; 23(1): 27-35. doi: 10.21608/ejs.2000.151467

Temperature Dependence of theTransport Properties in ZnS

Egyptian Journal of Solids
Article 3, Volume 23, Issue 1, 2000, Pages 27-35    PDF (115.24 K)
DOI: 10.21608/ejs.2000.151467
Abstract
Transport properties of ZnS in an electric field have been calculated in
the lattice temperature range between 77K-500K, by using a Monte Carlo
technique. It has been found that the threshold to occur a negative differential
resistance changes over this temperature range. The threshold field increased
from 1.5 × 105 V/cm at 77 K to 2.4 × 105 V/cm at 500 K. The influence of
impurity scattering event on ZnS has been neglected.
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