Characteristics Analysis of Contrast Transfer Images Based on Optoelectronic Integrators | ||
| Arab Journal of Nuclear Sciences and Applications | ||
| Article 9, Volume 54, Issue 3, July 2021, Pages 67-73 PDF (825.33 K) | ||
| Document Type: Original Article | ||
| DOI: 10.21608/ajnsa.2021.46488.1410 | ||
| Authors | ||
| Mohamed El Tokhy1; Elsayed Hassan Mahdy Ali Emarah* 2; Refaat Mohmaed Fikry3 | ||
| 1Engineering Department, NRC, Atomic Energy Authority, P. No. 13759, Inshas, Egypt | ||
| 2Department on Engineering, Nuclear Research Center, Egyptian Atomic Energy Authority | ||
| 3Engineering and Scientific Instruments, Nuclear Research Center, EAEA, Egypt | ||
| Abstract | ||
| The present study is concerned with overcoming the resultant image degradation due to the integration of the optoelectronics instruments (OEIDs). Accordingly, the characteristics of the image, due to optoelectronic integration, are handled and improved. The image features include the transmission mechanism and the concentration of electrons. The device performance is improved through the optimal design of the basic parameters. Furthermore, the efficient design of structure parameters will minimize the reabsorption process. Optimization of the integrator structure is realized. MATLAB environment is used for devising this instrument. The optimal number of integrator base and wave number characterizing the scale of near-infrared (NIR) image nonuniformity are estimated to be 13 and 0.206 respectively. The output of this instrument is also conducted through closed-form expressions of the underlined instrument. The achieved results show a remarkable accuracy for handling the deformations raised during the integration process. In addition, the results show that the carrier concentration changes the behavior of the output of the NIR image. | ||
| Keywords | ||
| Signal to Noise Ratio; Optical Signal Processing; Optoelectronic Integrated Circuits | ||
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