Orouji, A., Sharbati, S., Fathipour, M. (2008). A novel thin-film power MOSFET with an asymmetrical buried oxide double step structure. test, 6(6th International Conference on Electrical Engineering ICEENG 2008), 1-7. doi: 10.21608/iceeng.2008.34313
Ali A. Orouji; Samaneh Sharbati; Morteza Fathipour. "A novel thin-film power MOSFET with an asymmetrical buried oxide double step structure". test, 6, 6th International Conference on Electrical Engineering ICEENG 2008, 2008, 1-7. doi: 10.21608/iceeng.2008.34313
Orouji, A., Sharbati, S., Fathipour, M. (2008). 'A novel thin-film power MOSFET with an asymmetrical buried oxide double step structure', test, 6(6th International Conference on Electrical Engineering ICEENG 2008), pp. 1-7. doi: 10.21608/iceeng.2008.34313
Orouji, A., Sharbati, S., Fathipour, M. A novel thin-film power MOSFET with an asymmetrical buried oxide double step structure. test, 2008; 6(6th International Conference on Electrical Engineering ICEENG 2008): 1-7. doi: 10.21608/iceeng.2008.34313

A novel thin-film power MOSFET with an asymmetrical buried oxide double step structure

The International Conference on Electrical Engineering
Article 73, Volume 6, 6th International Conference on Electrical Engineering ICEENG 2008, May 2008, Pages 1-7    PDF (157.57 K)
Document Type: Original Article
DOI: 10.21608/iceeng.2008.34313
Authors
Ali A. Orouji1; Samaneh Sharbati1; Morteza Fathipour2
1Electrical Engineering Department, Semnan University, Semnan, IRAN.
2Electrical Engineering Department, Tehran University, Tehran, IRAN.
Abstract
Abstract:
In this paper, we have proposed a novel Silicon-On-Insulator (SOI) power MOSFET
structure .This structure is a combination of two sub structures: a buried oxide step
(BOS) and a buried oxide double step (BODS) that named asymmetrical buried oxide
double step (ABODS). Using two-dimensional simulation, we have investigated the
improvement in device performance focusing on the breakdown voltage. The ABODS
structure exhibits a high breakdown voltage respected to other SOI structures at a much
higher impurity concentration that can causes lower on-resistance (RON).
Keywords
Silicon-on-insulator (SOI); Power MOSFET; Breakdown Voltage; Buried Oxide Double Step Structure
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