Electrical characterization of Al/methyl-red/Ag schottky diode | ||
| The International Conference on Electrical Engineering | ||
| Article 75, Volume 6, 6th International Conference on Electrical Engineering ICEENG 2008, May 2008, Pages 1-8 PDF (87.74 K) | ||
| Document Type: Original Article | ||
| DOI: 10.21608/iceeng.2008.34315 | ||
| Authors | ||
| Zubair Ahmad; M. H. Sayyad; M. Saleem; Khasan S. Karimov; Mutabar Shah | ||
| Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, District Swabi, NWFP 23640, Pakistan. | ||
| Abstract | ||
| Abstract: This paper reports the fabrication and electrical characterization of surface type Al/methyl-red/Ag Schottky barrier diode. Electrodes were deposited on glass substrate with a narrow gap between them followed by spin coating of methyl-red (MR). A thin film of MR was deposited from 10 wt% solution in benzene by spin coater at an angular speed of 2000 revolution per minute (RPM) on a glass substrate with preliminary deposited metal electrodes. The thickness of the film was 300 nm. The length and width of the semiconducting channel between metallic electrodes were equal to 30 m and 17 mm, respectively. The current-voltage (I-V) characteristics of Al/MR/Ag structure showed rectification behavior. The value of rectification ratio was found about 200 at ±4 V. I-V characteristics of Al/MR/Ag structure were also investigated as a function of temperature ranging from 25-55 °C. The sample was also investigated as humidity sensor at room temperature within the relative humidity (RH) range of 30-90%. The impedance changed linearly and approximately reduced 5 orders of magnitude over the whole humidity range. It was observed that under the effect of humidity the capacitance of the MR film increased by 1.5 times over the whole humidity range. | ||
| Keywords | ||
| Schottky barrier diode; Current –voltage characteristics; humidity sensor; methyl-red | ||
|
Statistics Article View: 138 PDF Download: 234 |
||
