Sh., F., R., G., A., A. (1999). NOVEL SYNTHESIS OF DOPED AND UNDOPED ZINC OXIDE SEMICONDUCTOR VIA SOL-GEL TECHNIQUE UNDER ULTRASONIC WAVES EFFECTS. test, 2(2nd International Conference on Electrical Engineering ICEENG 1999), 505-513. doi: 10.21608/iceeng.1999.62549
Fayed M. Sh.; Gouda Sh. R.; Awwad S. A.. "NOVEL SYNTHESIS OF DOPED AND UNDOPED ZINC OXIDE SEMICONDUCTOR VIA SOL-GEL TECHNIQUE UNDER ULTRASONIC WAVES EFFECTS". test, 2, 2nd International Conference on Electrical Engineering ICEENG 1999, 1999, 505-513. doi: 10.21608/iceeng.1999.62549
Sh., F., R., G., A., A. (1999). 'NOVEL SYNTHESIS OF DOPED AND UNDOPED ZINC OXIDE SEMICONDUCTOR VIA SOL-GEL TECHNIQUE UNDER ULTRASONIC WAVES EFFECTS', test, 2(2nd International Conference on Electrical Engineering ICEENG 1999), pp. 505-513. doi: 10.21608/iceeng.1999.62549
Sh., F., R., G., A., A. NOVEL SYNTHESIS OF DOPED AND UNDOPED ZINC OXIDE SEMICONDUCTOR VIA SOL-GEL TECHNIQUE UNDER ULTRASONIC WAVES EFFECTS. test, 1999; 2(2nd International Conference on Electrical Engineering ICEENG 1999): 505-513. doi: 10.21608/iceeng.1999.62549

NOVEL SYNTHESIS OF DOPED AND UNDOPED ZINC OXIDE SEMICONDUCTOR VIA SOL-GEL TECHNIQUE UNDER ULTRASONIC WAVES EFFECTS

The International Conference on Electrical Engineering
Article 51, Volume 2, 2nd International Conference on Electrical Engineering ICEENG 1999, November 1999, Pages 505-513    PDF (2.01 M)
Document Type: Original Article
DOI: 10.21608/iceeng.1999.62549
Authors
Fayed M. Sh.; Gouda Sh. R.; Awwad S. A.
Egyptian Military forces.
Abstract
Research on advanced materials continues to develop along lines related to specific applications. Being the cheapest material with diverse applications in electronics, zinc oxide was selected to synthesize via the sol-gel technique under the effect of ultrasonic waves. It was prepared from the hydrolysis reaction of zinc acetate dihydrate in ethanolic solution at 80°C, followed by the condensation step catalyzed by lithium hydroxide under the effect of ultrasonic waves. Formamide in 30% by volume was used as a drying control chemical additive. Zinc oxide thin films were doped by antimony oxide resulting from the incorporation of SbCI3 with variable concentrations during the preparation of zinc oxide colloidal system. The thin zinc oxide films were made on glass microscope slides and calcined at 600°C. The characteristics of these films were studied via the IR, SEM, near IR transmittance and electric conductivity.
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